RADS Software
RADS software (patented) is the leading simulation, analysis & fit software for HRXRD of epitaxial thin-film structures on single crystal substrates.
- Enables accurate and fast XRD measurements' analysis
- Process parameters are automatically calculated
- Immediate process feedback to production
- Process Monitoring results in process and yield improvements
- The leading process monitoring & analysis software since 1991
Jordan Valley RADS is used on the QC3 and D1 systems from Jordan Valley, as well as being available for off-line use.
Request a demo of our RADS software >>>
Click to find out more about the QC3 - XRD for Epilayers.
Click to find out more about the Delta-X
JV RADS is the trusted software in the industry to simulate and analyze high-resolution X-ray diffraction (HRXRD) data from epitaxial thin-film structures on single crystal substrates. It is the software of choice throughout industry for R&D and production, as well as academia, for detailed analysis of simple and complex structures.
JV RADS has been developed over many years, previously with Bede and latterly with Jordan Valley, and this accumulated knowledge and experience has made it the market leader. The program is easy to learn and use, yet flexible and powerful. The simulations are performed using dynamical diffraction theory and, by incorporating patented data-fitting technology, key materials parameters such as film thickness and composition are determined automatically and reliably. JV RADS features an intuitive graphical user interface (GUI) and sophisticated automation capabilities.
JV RADS has been used for both R&D and process control for more than a decade. In addition to data analysis, the software can also be used to plan measurements and to teach the fundamentals of HRXRD.
- Themed GUI, which allows users to select the look-and-feel of the program (Bede, Jordan Valley and a Hybrid of the two)
- Added support for bonded SOI substrates
- Enhanced the defect scattering models to include a mosaic model and also the effects of random atom displacements due to ion-implantation
- Allows two measured datasets from different reflections to be simultaneously fitted using a common structural model
- Included the ability to display depth profiles of various parameters, such as composition
- Printed reports can be created in HTML, PDF, RTF, and various other formats
- Improved batch processing capabilities
- Support multi-core processors, and the ability to be assigned to any specific core/CPU.
- Employs the dynamical theory of X-ray diffraction (Takagi-Taupin) for accurate simulations
- Uses the SSE2/3 instructions available on modern processors for fast simulations. Simulations and fitting will run about x3-4 faster than the v3.x on the same computer.
- Includes patented data-fitting technology for reliable automated analysis of multi-layer structures
- Easily create model structures using a spreadsheet-style list of layers (including superlattices)
- Allows specification of arbitrary composition and strain profiles with layer parameter equations
- Layer parameter linking to simplify the analysis of complex multi-layer structures
- Extensive built-in and materials database, which can also be user customized
- Models epitaxy on non-001 cubic materials, such as layers on (110) and (111) oriented substrates. Also supports basel plane (c-plane) oriented hexagonal materials.
- Simulates realistic instrumental conditions
- Sophisticated scientific graphing and output capabilities
- Supports a variety of data file formats (inc. Jordan Valley, Bede, Bruker, PANalytical)
- Support for writing fitted results to a relational database
- Batch analysis of multiple experimental data files
- Provides an integrated macro language and powerful automation capabilities
- Supports Windows XP, Vista and 7