MRAM, GMR and hard disk drive materials are all formed from the same types of layer structures, namely magnetic metal layers, with ultra-thin insulating spacers. These materials are ideally characterized by XRR and XRF.
MRAM is a low power, non-volatile alternative to DRAM memory cells, which require high power to refresh the charge every few milliseconds. Based on a one transistor one resistor design, information is stored via the magnetic alignment of a floating storage layer. Bits are programmed in the floating layer by passing a current through the word line. The electrical characteristics of the resistor are controlled via the precise deposition of a dielectric potential barrier made of Al2O3, as well as with the thickness and densities of metallic layers forming a stack of alternating magnetic domains.
In XRR mode, Jordan Valley meets the process integration challenges of MRAM thin metal and dielectric stacks by measuring thickness, phase density and roughness of individual layers, pending the choice of metal used.
In addition, the XRD mode enables characterization of the crystallographic phase of the materials following their deposition and anneal.
GMR (Giant Magneto-Resistance) devices are utilized within the hard disk drive industry in the read-write heads. The layers utilized within the GMR devices are stacks of several ultra-thin magnetic and non-magnetic layers.
In XRR mode, Jordan Valley meets the process integration challenges of MRAM thin metal and dielectric stacks by measuring thickness, phase density and roughness of individual layers, pending the choice of metal used.