All publications are linked to their owner's pages to retain their original copyright. 



Where Published

2014 Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001) AIP
2014 Benefit of Combining Metrology Techniques for Thin SiGe Layers ASMC
2014 Measurement of periodicity and strain in arrays of single crystal silicon and pseudomorphic Si1−xGex/Si fin structures using x-ray reciprocal space maps AIP
2012 Prediction of the propagation probability of individual cracks in brittle single crystal materials AIP
2011 Metrology of epitaxial thin-films by advanced HRXRD and XRR
Electro IQ
2011 A Novel X-ray Diffraction and Reflectivity Tool for Front-End of Line Metrology
2010 Production metrology of advanced LED structures using high-resolution X-ray diffraction
Solid State Technology
2008 Mosaicity and stress effects on luminescence properties of GaN
Physica Status Solidi (a)
2007 Effect of thickness on structural and electrical properties of GaN films Grown on SiN-treated sapphire
Journal of Crystal Growth
2007 Asymmetric Relaxation of SiGe in Patterned Si Line Structures
AIP Conf. Proc.
2007 In-line characterization of HBT base layers by high-resolution X-ray diffraction
ECS Trans.
2007 X-ray metrology tool for new device materials and structures
Fabtech Semiconductor
2007 Ultra Low-κ Metrology Using X-Ray Reflectivity And Small-Angle X-Ray Scattering Techniques
AIP Conf. Proc.
2007 Under-bump Metallization (UBM) Control using X-ray Fluorescence (XRF)
AIP Conf. Proc.
2007 CMP Control of Multi-Layer Inter-Layer Dielectrics (ILD) using X-ray Reflectivity
AIP Conf. Proc.
2007 Characterization of Surface Preparation for Epitaxial SiGe Process using X-ray Reflectivity
ECS Trans.
2006 Application of x-ray metrology in the characterization of metal gate thin films
J. Vac. Sci. Technol. B
2006 Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility
J. Appl. Phys.


Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe Channels
ECS Trans.
2005 Combined XRR and RS Measurements of Nickel Silicide Films
AIP Conf. Proc.
2005 Accuracy and Repeatability of X-Ray Metrology
AIP Conf. Proc.
2005 Scans along arbitrary directions in Reciprocal space and the analysis of GaN films on SiC
Journal of Physics D
2005 MBE Growth and Properties of GaAsSbN/GaAs Single Quantum Wells
2005 Annealing effects on the temperature dependence of photoluminescence Characteristics of GaAsSbN single-quantum wells
J. Appl. Phys.

Independent Copyright Notices

API: Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.