Strain Metrology

SiGe, Si:C, sSOI

Jordan Valley HRXRD technology quantitatively measures the critical parameters of strain, thickness, composition and lattice relaxation of epitaxial layers with unsurpassed precision and sensitivity level.

HRXRD scan around the Si(022) peak of a 503 Å Si(1-x)Ge(x) layer with x =16.5% grown on a novel Si(011) substrate, which is being investigated for 45nm and beyond technology nodes.

HRXRD scan around the Si(004) peak of a 963 Å Si(1-x)C(x) layer with x = 0.98% grown on a Si(001) substrate. Si(1-x)C(x) is being investigated for selective source/drain epi for carrier mobility enhancements in 45 nm and beyond NMOS transistors.