BedeMetrix™-L

BedeMetrix™-L: Advanced Process control system for research & development

The BedeMetrix™-L is a versatile characterization and metrology system designed to meet the needs of the advanced silicon semiconductor industry. The system can be used for with amorphous, polycrystalline and crystalline thin-films from from 1nm to 10μm. It offers sub-atomic reproducibility across a broad spectrum of complex single and multi-layer structures using multiple X-ray techniques, including XRR, HRXRD and XRD. This advanced system performs analysis of material properties, including thickness, with atomic scale sensitivity. However, unlike optical and opto-acoustic metrology, the system also measures microstructural parameters, such as relaxation, strain, phase, composition, and density.

ADVANTAGES

• Blanket and product (patterned) wafer measurement capability

  • high-flux measurements with a sealed tube source and multilayer mirror

  • sub-100 micron test pads (HRXRD) and scribe lines (XRR) with ScribeView™

• Ultimate versatility

  • Combination of High Resolution X-ray Diffraction (HRXRD), X-ray Diffraction (XRD) and X-ray Reflectivity (XRR) on a single platform

• Proven sub-atomic reproducibility
• No calibration required

  • measures absolute parameters

• Zero edge exclusion
• High reliability

  • proven production capability in high volume manufacturing environments

• Applications

  • Epitaxial layers e.g. SiGe,

  • Strained Si, SOI, SGOI,

  • sSOI, barrier and Cu layers,

  • High-k layers, including ALD grown. In addition,

  • Back end process development capability on monitor wafers: barrier and Cu layers, low-k (including porous), high-k layers (inc. ALD grown)