BedeMetrix™-F

Production-proven, process control system for high-volume semiconductor manufacturing

The BedeMetrix™-F was the first production-proven, fully-automated in-line X-ray diffraction and reflectivity metrology system for high-volume semiconductor manufacturing. For epitaxial thin films, its high-resolution X-ray diffraction (XRD) capability provides strain, composition, relaxation and thickness measurements that are both accurate and precise. The tool provides critical characterization and metrology for strain engineering and has been proven in-field since the 90 nm technology node. Additionally, classical X-ray reflectivity provides thickness, roughness and density measurements on a range of amorphous, polycrystalline and crystalline films with thickness in the 1 nm to 1μm range. XRR based measurements are not sensitive to the materials microstructure and have both sub-atomic accuracy and precision. The X-ray diffraction capability is useful as a process development and excursion technique with application across a range of polycrystalline thin films.

ADVANTAGES

• Cost effective

  • reduces process development costs and eliminates the need for costly monitor wafers.

• Accuracy

  • measures absolute parameters e.g. lattice strain and phase. No calibration samples are required.

• Efficient

  • fully automated fast pattern recognition software delivers high throughput with SECS/GEM capability and 300mm automation standards

• Ultimate process versatility

  • can be optimized to enable high volume process control or configured for various applications

• Built for the future

  • the system meets the current and future requirements of the ITRS roadmap.

• Applications

  • Strained silicon process control – SiGe, Si:C and sSOI

  • Ultra-thin barrier metal process control - Ta/TaN, Ti/TiN thickness and density control, and crystalline phase control,

  • Metal stack control - thickness measurement of BEOL metal stack (Aluminum, Tungsten or Copper process).