D1 Diffractometer

PRODUCT DESCRIPTION

  • A materials research and development system for 200mm processes and below.
  • Intended for use with Silicon, III/V, SiC, LED, Solar, Research and Development, & Universities.
  • The D1 system is a versatile high resolution X-ray system for the characterisation of advanced thin films materials including compound and silicon-based semiconductors. It features a high-flux sealed tube X-ray generator, Si or Ge beam conditioning crystals, a 150 mm x-y mapping stage and a high dynamic range detector within a self-contain X-ray safety enclosure. Options such as a multilayer mirror, crystal analyzer, soller slits and a heat stage further expand the capabilities of the system. The D1 can characterise a variety of materials using a wide range of measurements techniques such as HRXRD (including reciprocal space mapping), XRR and XRD.

ADVANTAGES

  • High intensity with high resolution
  • Multiple system configurations
  • Measures a variety of parameters on a wide range of materials.
  • Non-destructive measurement techniques
  • Automation of measurements and experiments:
    • Allows very easy change between configurations
    • Enables automatic measurements under recipe control
  • The leading edge analysis SW (RADS, REFS..) for accurate and fast analysis. (worldwide proven with over 100 installations)
  • Works with Bede analysis software with auto-fitting and presentation graphics
  • Standard sealed tube X-ray generator
  • No calibration samples required. X-ray metrology techniques are absolute
  • Cost-effective system

APPLICATIONS

  • Epitaxial films (SiGe, Si:C)
  • Crystalline substrates (Si, SiC, III/V)
  • Polycrystalline films
  • Porous films

MEASUREMENTS:

  • Thickness
  • Composition
  • Relaxation
  • Strain
  • Area uniformity
  • Density
  • Roughness
  • Phase
  • Crystalline texture
  • Crystallinity
  • Pore size
  • Grain size