Barrier & Seed Layers

Ta, TaN, TiN, Ti, Cu-Seed

With each technology node, barrier layers are becoming increasingly thinner. One processing challenge is depositing thinner, conformal barrier and seed layers over high-aspect ratio structures. With today’s fast XRR, barrier films can be characterized down to the sub 10Å level, which makes XRR uniquely qualified to characterize ultra thin Atomic Layer Deposition (ALD) barriers.

Copper interconnect structure

• A single and extremely fast XRR measurement can deliver thickness, density and roughness information on a multi-layer stack of barrier and Cu seed, as well as their interfacial layers.

• Ultra thin barrier materials like this 20 Å ALD TaN can be quickly and accurately measured by the series of systems.