| BedeMetrix™-F | |
Production-proven, process control system for high-volume semiconductor manufacturingThe BedeMetrix™-F was the first production-proven, fully-automated in-line X-ray diffraction and reflectivity metrology system for high-volume semiconductor manufacturing. For epitaxial thin films, its High-Resolution X-ray Diffraction (HRXRD) capability provides strain, composition, relaxation and thickness measurements that are both accurate and precise. The tool provides critical characterization and metrology for strain engineering and has been proven in-field since the 90 nm technology node. Additionally, classical X-ray Reflectivity (XRR) provides thickness, roughness and density measurements on a range of amorphous, polycrystalline and crystalline films with thickness from 1 nm to 1μm . XRR based measurements are not sensitive to the materials microstructure and have both sub-atomic accuracy and precision. The polycrystalline X-ray Diffraction (XRD) capability is useful as a process development and excursion technique with application across a range of thin films.
FeaturesIdeal development tool for high precision measurements of new and existing materials Measures absolute parameters e.g. lattice strain and phase. No calibration samples are required. Full 300mm automation available Can be optimized to enable high volume process control or configured for various applications. Wide range of materials can be characterized on blanket and product wafers ApplicationsHRXRD: Thickness, composition and relaxation of SiGe Si:C layers HRXRD: Strained silicon process control – SiGe, Si:C and sSOI HRXRD: Thickness and composition of compound semiconductor epi films HRXRD: Strain and relaxation of compound semiconductor epi films HRXRD: Triple axis and reciprocal space mapping of complex structures WA-XRD: Ta/TaN, Ti/TiN thickness, density and crystalline phase control |










