Inspection system for surface and buried structural defects in patterned and blanket wafers BedeScan™ helps identify problems encountered during wafer production using the latest X-ray diffraction imaging (XRDI) technology. Applications include monitoring buried defects to prevent costly wafer breakage during ultra fast anneal. It can qualify and monitor process tools at any technology node, including 90nm and below, which reduces cycle times and facilitates fab expansion. This system provides the most comprehensive crystallographic defect inspection solution for analyzing wafer quality in incoming wafers and during metallization steps.
- Patented, fully digital topography system
- Full 300mm scanning, with rapid coarse scans of either the full wafer area or selected regions
- Can mount part 450mm wafers
- Monitoring of defects down to single dislocations, a single atom or row wide (<1nm), at any doping and wafer backside treatment.
- Unique edge exclusion zone monitoring
- Capability for a wide range of crystalline substrates
- Efficient system with low power sources
- Reflection, transmission and cross-section modes with little hardware change
- Si substrates and epi-layers
- Patterned wafer capability, even after metal layer deposition
- III-V, II-VI and IV-IV substrates
- SiC substrate and GaN epi-layers
- Thick substrates from end of boules to detemine slip penetration
- Full X-ray safety interlocks, fail-safe shutter and warning lamps
- Camera resolutions from 2.7μm for high resolution work
- Camera options for high resolution or high speed
- Microsource generators running at 80W for low power consumption
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