Publications

All publications are linked to their owner's pages to retain their original copyright.

Year

Title

Where Published

2008Mosaicity and stress effects on luminescence properties of GaNPhysica Status Solidi (a)
2007Effect of thickness on structural and electrical properties of GaN films Grown on SiN-treated sapphireJournal of Crystal Growth
2007Asymmetric Relaxation of SiGe in Patterned Si Line StructuresAIP Conf. Proc.
2007In-line characterization of HBT base layers by high-resolution X-ray diffractionECS Trans.
2007X-ray metrology tool for new device materials and structuresFabtech Semiconductor
2007Ultra Low-κ Metrology Using X-Ray Reflectivity And Small-Angle X-Ray Scattering TechniquesAIP Conf. Proc.
2007Under-bump Metallization (UBM) Control using X-ray Fluorescence (XRF)AIP Conf. Proc.
2007CMP Control of Multi-Layer Inter-Layer Dielectrics (ILD) using X-ray ReflectivityAIP Conf. Proc.
2007Characterization of Surface Preparation for Epitaxial SiGe Process using X-ray ReflectivityECS Trans.
2006Application of x-ray metrology in the characterization of metal gate thin filmsJ. Vac. Sci. Technol. B
2006Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobilityJ. Appl. Phys.

2006

Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe ChannelsECS Trans.
2005Combined XRR and RS Measurements of Nickel Silicide FilmsAIP Conf. Proc.
2005Accuracy and Repeatability of X-Ray MetrologyAIP Conf. Proc.
2005Scans along arbitrary directions in Reciprocal space and the analysis of GaN films on SiCJournal of Physics D
2005MBE Growth and Properties of GaAsSbN/GaAs Single Quantum WellsMRS
2005Annealing effects on the temperature dependence of photoluminescence Characteristics of GaAsSbN single-quantum wellsJ. Appl. Phys.