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JVX 6200

A comprehensive suite of superior X-ray metrology toolsJVX 6200

High-volume semiconductor fabs worldwide rely on Jordan Valley's complete family of metrology solutions based on high-speed, non-destructive XRR, XRF, GI-SAXS and HRXRD technologies. The JVX 6200 and 6200i platforms, combined with Bede metrology solutions, set the standard in extendibility, versatility, and cost of ownership. And deliver unmatched speed, resolution and precision for all film types.

ADVANTAGES

  • Independent Thickness, Density and Roughness Measurement
  • Addition of industry-leading Small Angle X-Ray Scattering (SAXS) capability for measurement of pore size and distribution, capable of pore size determination with pore diameters down to sub-10Å
  • Significantly Improved Cost of Ownership:
    » Smaller maintenance footprint
    » Higher throughput on XRR brightness (flux per area)
    » Higher throughput on XRF flux
    » Real-time processing via new algorithms and dual processor
    » Less frequent PM intervals
    » Improved reliability via 2X longer life XRR tube, and more reliable XRF detectors
  • Improved Ease-of-Use and Extendibility
    » Color camera/higher magnification microscope
    » WinXP® operating system
    » Improved pattern recognition with edge models and improved low-contrast feature performance
  • Improved "smart" algorithms allowing broader search ranges

ADDED CAPABILITIES

  • SAXS
  • Better stage stepping resolution
  • Significantly Improved Cost of Ownership
  • Smaller spot and required pad size XRR and XRF
  • Better performance on high scatter samples and ultrathin films (<30Å)
  • Extended thickness range XRR

APPLICATIONS

  • Bump Alloy Composition
  • Void Detection
  • Metals: Cu, Ti, Al, Ta, W, Alloys, etc.
  • Dielectrics: Oxides, Nitrides, Poly, etc.
  • High k and Low k Dielectrics
  • Silicides: WSix, TiSix, CoSix, NiSix, etc.
  • Magnetic RAM
  • Multi-Layer Stacks
  • Ultra-Thin Layers Down to 10Å
  • Epi- and Poly-Si1-x Gex Stoichiometry
  • WSix, TaOx Stoichiometry
  • ONO, SiON, SiRN