Jordan Valley Semiconductors | Publications | Publications

Publications

All publications are linked to their owner's pages to retain their original copyright.

Year	Title	Where Published
2011	Metrology of epitaxial thin-films by advanced HRXRD and XRR	Electro IQ
2011	A Novel X-ray Diffraction and Reflectivity Tool for Front-End of Line Metrology	FCMN2011
2010	Production metrology of advanced LED structures using high-resolution X-ray diffraction	Solid State Technology
2008	Mosaicity and stress effects on luminescence properties of GaN	Physica Status Solidi (a)
2007	Effect of thickness on structural and electrical properties of GaN ﬁlms Grown on SiN-treated sapphire	Journal of Crystal Growth
2007	Asymmetric Relaxation of SiGe in Patterned Si Line Structures	AIP Conf. Proc.
2007	In-line characterization of HBT base layers by high-resolution X-ray diffraction	ECS Trans.
2007	X-ray metrology tool for new device materials and structures	Fabtech Semiconductor
2007	Ultra Low-κ Metrology Using X-Ray Reflectivity And Small-Angle X-Ray Scattering Techniques	AIP Conf. Proc.
2007	Under-bump Metallization (UBM) Control using X-ray Fluorescence (XRF)	AIP Conf. Proc.
2007	CMP Control of Multi-Layer Inter-Layer Dielectrics (ILD) using X-ray Reflectivity	AIP Conf. Proc.
2007	Characterization of Surface Preparation for Epitaxial SiGe Process using X-ray Reflectivity	ECS Trans.
2006	Application of x-ray metrology in the characterization of metal gate thin films	J. Vac. Sci. Technol. B
2006	Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility	J. Appl. Phys.
2006	Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe Channels	ECS Trans.
2005	Combined XRR and RS Measurements of Nickel Silicide Films	AIP Conf. Proc.
2005	Accuracy and Repeatability of X-Ray Metrology	AIP Conf. Proc.
2005	Scans along arbitrary directions in Reciprocal space and the analysis of GaN ﬁlms on SiC	Journal of Physics D
2005	MBE Growth and Properties of GaAsSbN/GaAs Single Quantum Wells	MRS
2005	Annealing effects on the temperature dependence of photoluminescence Characteristics of GaAsSbN single-quantum wells	J. Appl. Phys.

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