D1 Diffractometer
PRODUCT DESCRIPTION
- A materials research and development system for 200mm processes and below.
- Intended for use with Silicon, III/V, SiC, LED, Solar, Research and Development, & Universities.
- The D1 system is a versatile high resolution X-ray system for the characterisation of advanced thin films materials including compound and silicon-based semiconductors. It features a high-flux sealed tube X-ray generator, Si or Ge beam conditioning crystals, a 150 mm x-y mapping stage and a high dynamic range detector within a self-contain X-ray safety enclosure. Options such as a multilayer mirror, crystal analyzer, soller slits and a heat stage further expand the capabilities of the system. The D1 can characterise a variety of materials using a wide range of measurements techniques such as HRXRD (including reciprocal space mapping), XRR and XRD.
ADVANTAGES
- High intensity with high resolution
- Multiple system configurations
- Measures a variety of parameters on a wide range of materials.
- Non-destructive measurement techniques
- Automation of measurements and experiments:
- Allows very easy change between configurations
- Enables automatic measurements under recipe control
- The leading edge analysis SW (RADS, REFS..) for accurate and fast analysis. (worldwide proven with over 100 installations)
- Works with Bede analysis software with auto-fitting and presentation graphics
- Standard sealed tube X-ray generator
- No calibration samples required. X-ray metrology techniques are absolute
- Cost-effective system
APPLICATIONS
- Epitaxial films (SiGe, Si:C)
- Crystalline substrates (Si, SiC, III/V)
- Polycrystalline films
- Porous films
MEASUREMENTS:
- Thickness
- Composition
- Relaxation
- Strain
- Area uniformity
- Density
- Roughness
- Phase
- Crystalline texture
- Crystallinity
- Pore size
- Grain size